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ZXMP10A18K
Electrical characteristics (at T amb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-source breakdown voltage V (BR)DSS
-100
V
I D = -250 A, V GS =0V
Zero gate voltage drain current
Gate-body leakage
I DSS
I GSS
-1
100
A
nA
V DS = -100V, V GS =0V
V GS =±20V, V DS =0V
Gate-source threshold voltage
Static drain-source on-state
V GS(th)
R DS(on)
-2.0
-4.0
0.150
V
I D = -250 A, V DS =V GS
V GS = -10V, I D = -2.8A
resistance (*)
0.190
V GS = -6V, I D = -2.4A
Forward transconductance (*)(?)
g fs
6.0
S
V DS = -15V, I D = -2.8A
Dynamic (?) (3)
Input capacitance
Output capacitance
Reverse transfer capacitance
C iss
C oss
C rss
1055
90
76
pF
pF
pF
V DS = -50V, V GS =0V
f=1MHz
Switching (?) (?)
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate drain charge
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
4.9
6.8
33.9
17.9
26.9
3.9
10.2
ns
ns
ns
ns
nC
nC
nC
V DD = -50V, I D = -1A
R G =6.0 , V GS = -10V
V DS = -50V, V GS = -10V
I D = -2.8A
Source-drain diode
Diode forward voltage (*)
V SD
-0.85
-0.95
V
T j =25°C, I S = -3.5A,
V GS =0V
Reverse recovery time (?)
Reverse recovery charge (?)
t rr
Q rr
49
107
ns
nC
T j =25°C, I S = -2.8A,
di/dt=100A/ms
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%
(?) Switching characteristics are independent of operating junction temperature.
(?) For design aid only, not subject to production testing.
Issue 1 - August 2006
? Zetex Semiconductors plc 2006
4
www.zetex.com
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